PART |
Description |
Maker |
HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns EDO DRAM 2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM -2M x 8 - Bit Dynamic RAM 2k Refresh 2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
|
UPD4217805G5-60-7JD UPD4217805G5-50-7JD UPD4217805 |
x8 EDO Page Mode DRAM 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO 16位动态随机存储器2m-word8位,江户
|
NEC TOKIN America Inc. NEC TOKIN, Corp.
|
AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO) x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation Integrated Silicon Solution, Inc. Lattice Semiconductor, Corp.
|
MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40 DRAM / FAST PAGE MODE TYPE 262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD OKI electronic componets
|
AS4C4M4E1Q AS4CM4E1Q-50 AS4CM4E1Q-60 AS4CM4EOQ AS4 |
Thick Film Chip Resistor - RMC 1 3.9 5% R 4米4的CMOS QuadCAS的DRAM(江户)家庭 4M X 4 CMOS Quad CAS DRAM (EDO) family 4M x 4 CMOS QuadCAS DRAM (EDO) family
|
Analog Devices, Inc. ALSC[Alliance Semiconductor Corporation]
|
V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp. Mosel Vitelic Corp MOSEL-VITELIC
|
IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50 |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 |
x8 EDO Page Mode DRAM 2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
|
IBM Microeletronics International Business Machines, Corp.
|
MSC2323258D-XXDS4 MSC2323258D-XXBS4 MSC2323258D MS |
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO From old datasheet system 2097152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO 2M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72 DPDT 10A MINI 115VAC 2097152字32位动态随机存储器模块:快速页面模式型与江
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD. Oki Electric Industry Co., Ltd.
|
IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式(3.3伏,4米4带扩展数据输出页模式动态随机存储器(刷k)的 x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|
UPD4217805LLE-A50 UPD42S17805LLE-A50 UPD4217805LG5 |
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,HYPER PAGE MODE 3.3运行16位动态随机存储器2m-word8位,超页模式
|
NEC TOKIN America Inc. NEC TOKIN, Corp.
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
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SIEMENS AG Infineon Technologies AG
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